Searching for a solid-state terahertz technology

[1] ErAs:GaAs photomixer with two-decade tunability and 12 μW peak output power [J]. APPLIED PHYSICS LETTERS, 2004, 85 (18) : 3983 - 3985

[2] Toward bridging the terahertz gap with silicon-based lasers [J]. SCIENCE, 2005, 308 (5722) : 638 - 639

[3] Terahertz semiconductor-heterostructure laser [J]. NATURE, 2002, 417 (6885) : 156 - 159

[4] Inter-valence-band hot hole laser in two-dimensional delta-doped homoepitaxial semiconductor structures [J]. JOURNAL OF NANOELECTRONICS AND OPTOELECTRONICS, 2007, 2 (01) : 51 - 57

[5] Far-infrared spectrum analysis using plasmon modes in a quantum-well transistor [J]. IEEE PHOTONICS TECHNOLOGY LETTERS, 2006, 18 (17-20) : 1925 - 1927

[6] 2.5-THz GaAs monolithic membrane-diode mixer [J]. IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1999, 47 (05) : 596 - 604

[7] Plasma wave detection of terahertz radiation by silicon field effects transistors: Responsivity and noise equivalent power [J]. APPLIED PHYSICS LETTERS, 2006, 89 (25)

[8] High-power terahertz quantum-cascade lasers [J]. ELECTRONICS LETTERS, 2006, 42 (02) : 89 - 91

[9] WILLIAMS BS, 2005, OPT EXPRESS, V13, P3111

[1] ErAs:GaAs photomixer with two-decade tunability and 12 μW peak output power [J]. APPLIED PHYSICS LETTERS, 2004, 85 (18) : 3983 - 3985

[2] Toward bridging the terahertz gap with silicon-based lasers [J]. SCIENCE, 2005, 308 (5722) : 638 - 639

[3] Terahertz semiconductor-heterostructure laser [J]. NATURE, 2002, 417 (6885) : 156 - 159

[4] Inter-valence-band hot hole laser in two-dimensional delta-doped homoepitaxial semiconductor structures [J]. JOURNAL OF NANOELECTRONICS AND OPTOELECTRONICS, 2007, 2 (01) : 51 - 57

[5] Far-infrared spectrum analysis using plasmon modes in a quantum-well transistor [J]. IEEE PHOTONICS TECHNOLOGY LETTERS, 2006, 18 (17-20) : 1925 - 1927

[6] 2.5-THz GaAs monolithic membrane-diode mixer [J]. IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1999, 47 (05) : 596 - 604

[7] Plasma wave detection of terahertz radiation by silicon field effects transistors: Responsivity and noise equivalent power [J]. APPLIED PHYSICS LETTERS, 2006, 89 (25)

[8] High-power terahertz quantum-cascade lasers [J]. ELECTRONICS LETTERS, 2006, 42 (02) : 89 - 91

[9] WILLIAMS BS, 2005, OPT EXPRESS, V13, P3111