Progress in Carbon Nanotube Electronics and Photonics

被引:73
作者
Avouris, Phaedon
Martel, Richard
机构
关键词
FIELD-EFFECT TRANSISTORS; HIGH-PERFORMANCE; ELECTRICAL-TRANSPORT; BAND-STRUCTURE; SINGLE; ELECTROLUMINESCENCE; HYSTERESIS; SEPARATION; SCATTERING; CONTACT;
D O I
10.1557/mrs2010.553
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
In electronics and photonics, intrinsic properties of semiconducting materials play a dominant role in achieving high-performance devices and circuits. In this respect, carbon nanotubes are prime candidates because of their exceptionally high carrier mobility, low capacitance, and strong optical response (direct bandgap). Although these properties compare very favorably with those of crystalline silicon, several issues related to their synthesis, processing, and assembly have challenged efforts for making electronic and photonic devices. Tremendous progress, nevertheless, has been achieved over the years, and much has been learned from novel photonic devices and electronic circuits. We review some of the developments in nanotube transistor performance optimization, ac operation, nanotube circuits, self-assembly, thin-film devices, and nanotube optical devices such as light emitters and detectors. We also examine the issues and opportunities that still exist.
引用
收藏
页码:306 / 313
页数:8
相关论文
共 90 条
[51]   Role of Fermi-level pinning in nanotube Schottky diodes [J].
Léonard, F ;
Tersoff, J .
PHYSICAL REVIEW LETTERS, 2000, 84 (20) :4693-4696
[52]  
LEONARD F, 2008, PHYS CARBON NANOTZTB
[53]   Crosstalk between nanotube devices:: contact and channel effects [J].
Leonard, Francois .
NANOTECHNOLOGY, 2006, 17 (09) :2381-2385
[54]   High-performance carbon nanotube field-effect transistor with tunable Polarities [J].
Lin, YM ;
Appenzeller, J ;
Knoch, J ;
Avouris, P .
IEEE TRANSACTIONS ON NANOTECHNOLOGY, 2005, 4 (05) :481-489
[55]   Electrical transport and 1/f noise in semiconducting carbon nanotubes [J].
Lin, Yu-Ming ;
Appenzeller, Joerg ;
Chen, Zhihong ;
Avouris, Phaedon .
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2007, 37 (1-2) :72-77
[56]   Single- and multi-wall carbon nanotube field-effect transistors [J].
Martel, R ;
Schmidt, T ;
Shea, HR ;
Hertel, T ;
Avouris, P .
APPLIED PHYSICS LETTERS, 1998, 73 (17) :2447-2449
[57]   Ambipolar electrical transport in semiconducting single-wall carbon nanotubes [J].
Martel, R ;
Derycke, V ;
Lavoie, C ;
Appenzeller, J ;
Chan, KK ;
Tersoff, J ;
Avouris, P .
PHYSICAL REVIEW LETTERS, 2001, 87 (25) :256805-1
[58]   Exciton formation and annihilation during 1D impact excitation of carbon nanotubes [J].
Marty, L ;
Adam, E ;
Albert, L ;
Doyon, R ;
Ménard, D ;
Martel, R .
PHYSICAL REVIEW LETTERS, 2006, 96 (13)
[59]   Exciton binding energies in carbon nanotubes from two-photon photoluminescence [J].
Maultzsch, J ;
Pomraenke, R ;
Reich, S ;
Chang, E ;
Prezzi, D ;
Ruini, A ;
Molinari, E ;
Strano, MS ;
Thomsen, C ;
Lienau, C .
PHYSICAL REVIEW B, 2005, 72 (24)
[60]   Electrically induced optical emission from a carbon nanotube FET [J].
Misewich, JA ;
Martel, R ;
Avouris, P ;
Tsang, JC ;
Heinze, S ;
Tersoff, J .
SCIENCE, 2003, 300 (5620) :783-786