Comparative study of epitaxial growth of Pt and Ir electrode films grown on MgO-buffered Si(100) by PLD

被引：19

作者：

Chen, TL

Li, XM

Zhang, S

Zhang, X

机构：

[1] Chinese Acad Sci, Shanghai Inst Ceram, State Key Lab High Performance Ceram & Superfine, Shanghai 200050, Peoples R China

[2] Nanyang Technol Univ, Sch Mech & Prod Engn, Singapore 639798, Singapore

来源：

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 2005年 / 80卷 / 01期

关键词：

D O I：

10.1007/s00339-004-2978-2

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

(200)-oriented Pt and Ir electrode films have been epitaxially grown on MgO/Si(100) by in situ pulsed-laser deposition (PLD). A comparison of crystallinity and surface morphology of both electrode films was made. It was found that both electrode films featured remarkable atomic-scale smooth surfaces and had the same epitaxial relationship with substrates. Different from the noncompact surface morphology of the Pt film, the morphology of the Ir film offers a rectangular grain shape and the grains are arrayed regularly and compactly. The difference in the surface morphology of both electrode films is briefly explained in terms of the degree of species' saturation.

引用

页码：73 / 76

页数：4

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