Strain Relaxation during Formation of Ge Nanolens Stacks

被引：3

作者：

Chang, H. T. ^{[1
]}

Chen, W. Y. ^{[2
]}

Hsu, T. M. ^{[2
]}

Shushpannikov, P. S. ^{[3
]}

Goldstein, R. V. ^{[3
]}

Lee, S. W. ^{[1
]}

机构：

[1] Natl Cent Univ, Inst Mat Sci & Engn, Jhongli 32001, Taiwan

[2] Natl Cent Univ, Dept Phys, Jhongli 32001, Taiwan

[3] Russian Acad Sci, Inst Problems Mech, Moscow 119526, Russia

来源：

ELECTROCHEMICAL AND SOLID STATE LETTERS | 2010年 / 13卷 / 05期

关键词：

elemental semiconductors; etching; germanium; multilayers; photoluminescence; Raman spectra; semiconductor quantum dots; stress relaxation; QUANTUM DOTS; SUPERLATTICE NANOWIRES; ALLOY COMPOSITION; SI(001); PHOTOLUMINESCENCE; NANOCRYSTALS;

D O I：

10.1149/1.3329653

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

Self-aligned stacked Ge nanolenses were fabricated by selective chemical wet etching of Ge dot/Si multilayers. After removal of Si spacers, Ge nanodots become more lenticular. Based on the results of Raman spectroscopy, this shape change is attributed to the strain relief of Ge nanodots. The geometrical modulation could also be greatly beneficial to the vertical self-alignment of Ge nanolenses during the etching process. In addition, the improved full width at half-maximum value of the photoluminescence emission can be attributed to the reduction in size and composition fluctuations within the stacked Ge nanolenses.

引用

页码：K43 / K45

页数：3

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