Self-forming silicide/SiGe-based tube structure on Si(001) substrates

被引：3

作者：

Chen, HC ^{[1
]}

Liao, KF ^{[1
]}

Lee, SW ^{[1
]}

Chen, LJ ^{[1
]}

机构：

[1] Natl Tsing Hua Univ, Dept Mat Sci & Engn, Hsinchu 300, Taiwan

来源：

THIN SOLID FILMS | 2004年 / 469卷

关键词：

self-forming; SiGe; silicide; tube;

D O I：

10.1016/j.tsf.2004.06.167

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Silicide/SiGe-based tube structures have been fabricated onto silicon by precise transformation from two-dimensional structures to three-dimensional objects. By using the strain in a pair of lattice-mismatched epitaxy layers, a method was developed to create the tube structure by their release from a substrate. The tube structures combining semiconductor (Site) and metallic silicide (NiSi2) may find applications in advanced devices. (C) 2004 Elsevier B.V. All rights reserved.

引用

页码：483 / 486

页数：4

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