EPITAXIAL-GROWTH OF NISI2 ON ION-IMPLANTED SILICON AT 250-280-DEGREES-C

被引：26

作者：

LU, SW

NIEH, CW

CHEN, LJ

机构：

来源：

APPLIED PHYSICS LETTERS | 1986年 / 49卷 / 26期

关键词：

D O I：

10.1063/1.97239

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1770 / 1772

页数：3

共 17 条

[1]

CHEN LJ, 1983, CHIN J MATER SCI, V15, P1

[2]

CHRISTIAN JW, 1975, THEORY TRANSFORMA 1

[3] PLATINUM SILICIDE OHMIC CONTACTS TO SHALLOW JUNCTIONS IN SILICON [J].

COHEN, SS ;

PIACENTE, PA ;

GILDENBLAT, G ;

BROWN, DM .

JOURNAL OF APPLIED PHYSICS, 1982, 53 (12) :8856-8862

[4] Kinetics of formation of silicides: A review [J].

d'Heurle, F. M. ;

Gas, P. .

JOURNAL OF MATERIALS RESEARCH, 1986, 1 (01) :205-221

[5] LOW-TEMPERATURE REDISTRIBUTION OF AS IN SI DURING NI SILICIDE FORMATION [J].

OHDOMARI, I ;

AKIYAMA, M ;

MAEDA, T ;

HORI, M ;

TAKEBAYASHI, C ;

OGURA, A ;

CHIKYO, T ;

KIMURA, I ;

YONEDA, K ;

TU, KN .

JOURNAL OF APPLIED PHYSICS, 1984, 56 (10) :2725-2728

[6]

OHDOMARI I, 1986, MATER RES SOC S P, V54, P63

[7] SILICON-GATE N-WELL CMOS PROCESS BY FULL ION-IMPLANTATION TECHNOLOGY [J].

OHZONE, T ;

SHIMURA, H ;

TSUJI, K ;

HIRAO, T .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (09) :1789-1795

[8] INFLUENCE OF NATURE OF SI SUBSTRATE ON NICKEL SILICIDE FORMED FROM THIN NI FILMS [J].

OLOWOLAFE, JO ;

NICOLET, MA ;

MAYER, JW .

THIN SOLID FILMS, 1976, 38 (02) :143-150

[9] EFFECT OF DOPANT ON REACTION BETWEEN POLYCRYSTALLINE SILICON AND THIN-FILM RHODIUM [J].

PSARAS, PA ;

THOMPSON, RD ;

TU, KN .

APPLIED PHYSICS LETTERS, 1985, 47 (03) :250-252

[10]

Tu K. N., 1978, Thin films. Interdiffusion and reactions, P359

← 1 2 →