Self-assembled nanorings in Si-capped Ge quantum dots on (001)Si

被引：50

作者：

Lee, SW ^{[1
]}

Chen, LJ

Chen, PS

Tsai, MJ

Liu, CW

Chien, TY

Chia, CT

机构：

[1] Natl Tsing Hua Univ, Dept Mat Sci & Engn, Hsinchu, Taiwan

[2] Ind Technol Res Inst, Elect Res & Serv Org, Hsinchu, Taiwan

[3] Natl Taiwan Normal Univ, Dept Phys, Taipei 117, Taiwan

来源：

APPLIED PHYSICS LETTERS | 2003年 / 83卷 / 25期

关键词：

D O I：

10.1063/1.1635073

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Nanorings with an average height and diameter of 1.2 and 65 nm, respectively, were observed to form in Si-capped Ge quantum dots grown at 600 degreesC by ultrahigh-vacuum chemical vapor deposition. The nanorings were captured with the rapid cooling of the samples with appropriate amount of Si capping. Based on the results of transmission electron microscopy and Raman spectroscopy, the formation of nanorings is attributed to alloying and strain relief in the Si/Ge/(001)Si system. The self-assembly of nanorings provides a useful scheme to form ultrasmall ring-like structure and facilitates the characterization of the physical properties of unconventional quantum structures. (C) 2003 American Institute of Physics.

引用

页码：5283 / 5285

页数：3

共 19 条

[1] Electroluminescence of Ge/Si self-assembled quantum dots grown by chemical vapor deposition [J].

Brunhes, T ;

Boucaud, P ;

Sauvage, S ;

Aniel, F ;

Lourtioz, JM ;

Hernandez, C ;

Campidelli, Y ;

Kermarrec, O ;

Bensahel, D ;

Faini, G ;

Sagnes, I .

APPLIED PHYSICS LETTERS, 2000, 77 (12) :1822-1824

[2] RAMAN-SCATTERING FROM GEXSI1-X/SI STRAINED-LAYER SUPERLATTICES [J].

CERDEIRA, F ;

PINCZUK, A ;

BEAN, JC ;

BATLOGG, B ;

WILSON, BA .

APPLIED PHYSICS LETTERS, 1984, 45 (10) :1138-1140

[3] Self-assembled SiGe quantum rings grown on Si(001) by molecular beam epitaxy [J].

Cui, J ;

He, Q ;

Jiang, XM ;

Fan, YL ;

Yang, XJ ;

Xue, F ;

Jiang, ZM .

APPLIED PHYSICS LETTERS, 2003, 83 (14) :2907-2909

[4] In(Ga)As self-assembled quantum ring formation by molecular beam epitaxy [J].

Granados, D ;

García, JM .

APPLIED PHYSICS LETTERS, 2003, 82 (15) :2401-2403

[5]

Hsu BC, 2002, INTERNATIONAL ELECTRON DEVICES 2002 MEETING, TECHNICAL DIGEST, P91, DOI 10.1109/IEDM.2002.1175786

[6] Evolution of Ge islands on Si(001) during annealing [J].

Kamins, TI ;

Medeiros-Ribeiro, G ;

Ohlberg, DAA ;

Williams, RS .

JOURNAL OF APPLIED PHYSICS, 1999, 85 (02) :1159-1171

[7] A Raman scattering study of self-assembled pure isotope Ge/Si(100) quantum dots [J].

Kolobov, AV ;

Morita, K ;

Itoh, KM ;

Haller, EE .

APPLIED PHYSICS LETTERS, 2002, 81 (20) :3855-3857

[8]

LIN JC, 2001, PHYS REV B, V65, P5304

[9]

Liu J, 2002, PHYS REV B, V66, DOI 10.1103/PhysRevB.66.161304

[10] Strain-induced quantum ring hole states in a gated vertical quantum dot [J].

Liu, J ;

Zaslavsky, A ;

Freund, LB .

PHYSICAL REVIEW LETTERS, 2002, 89 (09) :968041-968044

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