Engineering the magnetic properties of Ge1-xMnx nanowires

被引：11

作者：

Kazakova, Olga

Kulkarni, Jaideep S.

Arnold, Donna C.

Holmes, Justin D.

机构：

[1] Natl Phys Lab, Teddington TW11 0LW, Middx, England

[2] Natl Univ Ireland Univ Coll Cork, Dept Chem, Cork, Ireland

来源：

JOURNAL OF APPLIED PHYSICS | 2007年 / 101卷 / 09期

关键词：

D O I：

10.1063/1.2694052

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Possible origins of room-temperature ferromagnetism in GeMn nanowires (NWs) are investigated. Arrays of Ge1-xMnx NWs and Ge/Ge1-xMnx nanocables (NCs) (x=1%-5%) have been synthesized within the pores of anodized alumina oxide (AAO) membranes. The influence of annealing on the magnetic properties of Ge1-xMnx NWs is studied. The room-temperature ferromagnetism is preserved after the postfabrication annealing in inert atmosphere (T-ann=750 degrees C) demonstrating overall compatibility of Ge1-xMnx NWs with conventional complementary metal-oxide semiconductor technology. The role of oxygen in high-T-C ferromagnetic ordering is investigated in double-phased NCs with a Ge sheath. Despite a barrier to oxygen migration from the AAO membrane, samples still display room-temperature ferromagnetism, hence, ruling out any significant role of oxygen in the explanation of the high T-C in the system. The magnetic properties of the one-dimensional Ge1-xMnx nanostructures can be understood by considering interface related phenomena. (c) 2007 American Institute of Physics.

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共 13 条

[1] Activation of high-Tc ferromagnetism in Co2+:TiO2 and Cr3+:TiO2 nanorods and nanocrystals by grain boundary defects [J].

Bryan, JD ;

Santangelo, SA ;

Keveren, SC ;

Gamelin, DR .

JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 2005, 127 (44) :15568-15574

[2] Transition metal impurities in Ge: Chemical trends and codoping studied by electronic structure calculations [J].

Continenza, A ;

Profeta, G ;

Picozzi, S .

PHYSICAL REVIEW B, 2006, 73 (03)

[3] High-Curie-temperature ferromagnetism in self-organized Ge1-xMnx nanocolumns [J].

Jamet, Matthieu ;

Barski, Andre ;

Devillers, Thibaut ;

Poydenot, Valier ;

Dujardin, Romain ;

Bayle-Guillemaud, Pascale ;

Rothman, Johan ;

Bellet-Amalric, Edith ;

Marty, Alain ;

Cibert, Joel ;

Mattana, Richard ;

Tatarenko, Serge .

NATURE MATERIALS, 2006, 5 (08) :653-659

[4] Prospects for high temperature ferromagnetism in (Ga,Mn)As semiconductors -: art. no. 165204 [J].

Jungwirth, T ;

Wang, KY ;

Masek, J ;

Edmonds, KW ;

König, J ;

Sinova, J ;

Polini, M ;

Goncharuk, NA ;

MacDonald, AH ;

Sawicki, M ;

Rushforth, AW ;

Campion, RP ;

Zhao, LX ;

Foxon, CT ;

Gallagher, BL .

PHYSICAL REVIEW B, 2005, 72 (16)

[5] Room-temperature ferromagnetism in Ge1-xMnx nanowires -: art. no. 094415 [J].

Kazakova, O ;

Kulkarni, JS ;

Holmes, JD ;

Demokritov, SO .

PHYSICAL REVIEW B, 2005, 72 (09)

[6] Electronic structure, magnetic ordering, and optical properties of GaN and GaAs doped with Mn [J].

Kulatov, E ;

Nakayama, H ;

Mariette, H ;

Ohta, H ;

Uspenskii, YA .

PHYSICAL REVIEW B, 2002, 66 (04) :452031-452039

[7] Structural and magnetic characterization of Ge0.99Mn0.01 nanowire arrays [J].

Kulkarni, JS ;

Kazakova, O ;

Erts, D ;

Morris, MA ;

Shaw, MT ;

Holmes, JD .

CHEMISTRY OF MATERIALS, 2005, 17 (14) :3615-3619

[8] Carrier-mediated ferromagnetic ordering in Mn ion-implanted p+GaAs:C -: art. no. 085210 [J].

Park, YD ;

Lim, JD ;

Suh, KS ;

Shim, SB ;

Lee, JS ;

Abernathy, CR ;

Pearton, SJ ;

Kim, YS ;

Khim, ZG ;

Wilson, RG .

PHYSICAL REVIEW B, 2003, 68 (08)

[9] A group-IV ferromagnetic semiconductor:: MnxGe1-x [J].

Park, YD ;

Hanbicki, AT ;

Erwin, SC ;

Hellberg, CS ;

Sullivan, JM ;

Mattson, JE ;

Ambrose, TF ;

Wilson, A ;

Spanos, G ;

Jonker, BT .

SCIENCE, 2002, 295 (5555) :651-654

[10] Effects of defects and doping on wide band gap ferromagnetic semiconductors [J].

Pearton, SJ ;

Abernathy, CR ;

Thaler, GT ;

Frazier, R ;

Ren, F ;

Hebard, AF ;

Park, YD ;

Norton, DP ;

Tang, W ;

Stavola, M ;

Zavada, JM ;

Wilson, RG .

PHYSICA B-CONDENSED MATTER, 2003, 340 :39-47