GaAs metal-insulator-semiconductor structure and field effect transistors grown by ex-situ approach

被引：4

作者：

Chen, Z

Mohammad, SN

机构：

[1] Univ Illinois, Coordinated Sci Lab, Urbana, IL 61801 USA

[2] Univ Illinois, Mat Res Lab, Urbana, IL 61801 USA

[3] Howard Univ, Dept Elect Engn, Washington, DC 20059 USA

来源：

ELECTRONICS LETTERS | 1997年 / 33卷 / 22期

关键词：

metal-insulator-semiconductor devices; molecular beam epitaxy;

D O I：

10.1049/el:19971276

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A high quality Si3N4/Si/p-GaAs MIS structure has been obtained by the ex-situ growth approach. An interface trap density as low as 9 x 10(10)eV(-1)cm(-2) was obtained from the conductance measurements. A depletion-mode MISFET with transconductance of 85mS/mm has been fabricated using this ex-situ growth approach.

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页码：1906 / 1907

页数：2

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