Use of attenuated phase masks in extreme ultraviolet lithography

被引：13

作者：

Wood, OR

White, DL

Bjorkholm, JE

Fetter, LE

Tennant, DM

MacDowell, AA

LaFontaine, B

Kubiak, GD

机构：

[1] AT&T Bell Labs, Lucent Technol, Murray Hill, NJ 07974 USA

[2] AT&T Bell Labs, Lucent Technol, Holmdel, NJ 07733 USA

[3] AT&T Bell Labs, Lucent Technol, Brookhaven Natl Lab, Upton, NY 11973 USA

[4] Sandia Natl Labs, Livermore, CA 94551 USA

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1997年 / 15卷 / 06期

关键词：

D O I：

10.1116/1.589664

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have used an attenuated phase mask, a mask with a rr-phase shifting attenuator, in extreme ultraviolet lithography at 13.9 nm wavelength to produce resist profiles with sharper, more vertical sidewalls. (C) 1997 American Vacuum Society.

引用

页码：2448 / 2451

页数：4

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