USE OF TRILEVEL RESISTS FOR HIGH-RESOLUTION SOFT-X-RAY PROJECTION LITHOGRAPHY

被引：16

作者：

BERREMAN, DW ^{[1
]}

BJORKHOLM, JE ^{[1
]}

BECKER, M ^{[1
]}

EICHNER, L ^{[1
]}

FREEMAN, RR ^{[1
]}

JEWELL, TE ^{[1
]}

MANSFIELD, WM ^{[1
]}

MACDOWELL, AA ^{[1
]}

OMALLEY, ML ^{[1
]}

RAAB, EL ^{[1
]}

SILFVAS, WT ^{[1
]}

SZETO, LH ^{[1
]}

TENNANT, DM ^{[1
]}

WASKIEWICZ, WK ^{[1
]}

WHITE, DL ^{[1
]}

WINDT, DL ^{[1
]}

WOOD, OR ^{[1
]}

机构：

[1] AT&T BELL LABS,HOLMDEL,NJ 07733

来源：

APPLIED PHYSICS LETTERS | 1990年 / 56卷 / 22期

关键词：

D O I：

10.1063/1.102961

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A projection optical system with 20:1 reduction has been used with radiation at ∼36 nm to evaluate resists for use in soft-x-ray projection lithography. The high absorption of soft x rays by carbon-based polymers requires that an imaging resist layer be very thin. The sensitivities and contrasts of several such resists are reported. By incorporating a thin imaging layer into a trilayer resist scheme, we have exposed, developed, and transferred features as small as 0.2 μm into silicon.

引用

页码：2180 / 2182

页数：3

共 9 条

[1] SOFT-X-RAY PROJECTION LITHOGRAPHY - PRINTING OF 0.2-MU-M FEATURES USING A 20-1 REDUCTION [J].