Optical absorption spectra of thin GaInNAs single quantum wells investigated by means of piezoelectric photothermal spectroscopy

被引：18

作者：

Ikari, T

Imai, K

Ito, A

Kondow, M

机构：

[1] Miyazaki Univ, Fac Engn, Miyazaki 8892192, Japan

[2] Hitachi Ltd, Cent Res Lab, Tokyo 1858601, Japan

来源：

APPLIED PHYSICS LETTERS | 2003年 / 82卷 / 19期

关键词：

D O I：

10.1063/1.1573358

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Recently developed compound semiconductor GaInNAs is a promising material for optical fiber communication. The absorption spectrum of thin GaInNAs layer (10-nm thickness) was observed by using our developed piezoelectric photothermal spectroscopy. The spectra revealed a step-like density of states and exciton formation in two-dimensional discrete levels in the quantum well. Effective mass of the conduction band was estimated to be 0.05m(0) by assuming that the valence-band offset was negligible. Rapid thermal annealing relaxes a lattice defects and distortions, and this results in a blueshift of the spectrum. (C) 2003 American Institute of Physics.

引用

收藏

页码：3302 / 3303

页数：2

相关论文

共 12 条

[1] Piezoelectric photoacoustic spectra of Zn-doped InGaAlP light-emitting diodes [J].

Fukuyama, A ;

Nagatomo, H ;

Akashi, Y ;

Ikari, T .

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2001, 4 (1-3) :265-267

[2] Piezoelectric photothermal study of AlxGa1-xAs epitaxial layer (x=0.22, 0.28, and 0.5) grown on semi-insulating GaAs substrate [J].

Fukuyama, A ;

Fukuhara, H ;

Tanaka, S ;

Memon, AA ;

Sakai, K ;

Akashi, Y ;

Ikari, T .

JOURNAL OF APPLIED PHYSICS, 2001, 90 (09) :4385-4391

[3] Piezoelectric photoacoustic studies of optical recovery of metastable states related to EL2 and EL6 levels in semi-insulating GaAs [J].

Fukuyama, A ;

Akashi, Y ;

Yoshino, K ;

Maeda, K ;

Ikari, T .

PHYSICAL REVIEW B, 1998, 58 (19) :12868-12875

[4] PHOTOACOUSTIC SIGNALS OF N-TYPE GAAS-LAYERS GROWN BY MOLECULAR-BEAM EPITAXY ON SEMIINSULATING SUBSTRATES [J].

IKARI, T ;

FUKUYAMA, A ;

MAEDA, K ;

FUTAGAMI, K ;

SHIGETOMI, S ;

AKASHI, Y .

PHYSICAL REVIEW B, 1992, 46 (16) :10173-10178

[5]

IKARI T, 2000, SEMICONDUCTOR ELECT, pCH5

[6] Molecular beam epitaxy of GaInNAs by using solid source arsenic [J].

Kitatani, T ;

Kondow, M ;

Tanaka, T .

JOURNAL OF CRYSTAL GROWTH, 2001, 227 :521-526

[7] GaInNAs: A novel material for long-wavelength-range laser diodes with excellent high-temperature performance [J].

Kondow, M ;

Uomi, K ;

Niwa, A ;

Kitatani, T ;

Watahiki, S ;

Yazawa, Y .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1996, 35 (2B) :1273-1275

[8] Conduction band offset and electron effective mass in GaInNAs/GaAs quantum-well structures with low nitrogen concentration [J].

Pan, Z ;

Li, LH ;

Lin, YW ;

Sun, BQ ;

Jiang, DS ;

Ge, WK .

APPLIED PHYSICS LETTERS, 2001, 78 (15) :2217-2219

[9] Band anticrossing in GaInNAs alloys [J].

Shan, W ;

Walukiewicz, W ;

Ager, JW ;

Haller, EE ;

Geisz, JF ;

Friedman, DJ ;

Olson, JM ;

Kurtz, SR .

PHYSICAL REVIEW LETTERS, 1999, 82 (06) :1221-1224

[10] Photoluminescence and photoreflectance of GaInNAs single quantum wells [J].

Shirakata, S ;

Kondow, M ;

Kitatani, T .

APPLIED PHYSICS LETTERS, 2001, 79 (01) :54-56