Photoluminescence and photoreflectance of GaInNAs single quantum wells

被引：52

作者：

Shirakata, S ^{[1
]}

Kondow, M

Kitatani, T

机构：

[1] Ehime Univ, Fac Engn, Matsuyama, Ehime 7908577, Japan

[2] Hitachi Ltd, Cent Res Lab, RWCP Opt Interconnect Hitachi Lab, Tokyo 1858601, Japan

来源：

APPLIED PHYSICS LETTERS | 2001年 / 79卷 / 01期

关键词：

D O I：

10.1063/1.1374221

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The temperature dependence of photoluminescence (PL) and photoreflectance (PR) was studied on a 10 nm GaInNAs/GaAs single quantum well prepared by molecular-beam epitaxy using a solid As source. PL was dominated by the near-band edge PL peak with a full width at half maximum (FWHM) value of 16-28 meV for 50-280 K. This indicates that the GaInNAs epilayer was of good quality. The temperature dependence of the band gap energy was studied by the PR measurements, and the dependence was comparable to that of the GaInAs. The near-band edge PL at low temperature exhibited a blueshift with an increase in excitation intensity and temperature (8-50 K). It had a large FWHM value of 24-26 meV at 8 K. These results are discussed in terms of carrier localization. (C) 2001 American Institute of Physics.

引用

页码：54 / 56

页数：3

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