Temperature dependence of the surface plasmon coupling with an InGaN/GaN quantum well

被引：45

作者：

Lu, Yen-Cheng

Chen, Cheng-Yen

Yeh, Dong-Ming

Huang, Chi-Feng

Tang, Tsung-Yi

Huang, Jeng-Jie

Yang, C. C.

机构：

[1] Natl Taiwan Univ, Grad Inst Electroopt Engn, Taipei 10617, Taiwan

[2] Natl Taiwan Univ, Dept Elect Engn, Taipei 10617, Taiwan

来源：

APPLIED PHYSICS LETTERS | 2007年 / 90卷 / 19期

关键词：

D O I：

10.1063/1.2738194

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The authors demonstrate the temperature-dependent behavior of the surface plasmon (SP) coupling with two InGaN/GaN quantum-well (QW) structures of different internal quantum efficiencies. The SP modes are generated at the interface between the QW structures and Ag thin films coated on their tops. It is observed that the SP-QW coupling rate increases with temperature. Such a trend may rely on several factors, including the availability of carriers with sufficient momenta for transferring the energy and momentum into the SP modes and possibly the variation of the SP density of state with temperature. Although the required momentum matching condition only needs the thermal energy corresponding to a few tens of Kelvins, the carrier delocalization process results in a significantly higher probability of SP-carrier momentum matching and hence SP-QW coupling. (C) 2007 American Institute of Physics.

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页数：3

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共 12 条

[1] Dependence of resonant coupling between surface plasmons and an InGaN quantum well on metallic structure [J].

Chen, Cheng-Yen ;

Yeh, Dong-Ming ;

Lu, Yen-Cheng ;

Yang, C. C. .

APPLIED PHYSICS LETTERS, 2006, 89 (20)

[2] Nanostructures and carrier localization behaviors of green-luminescence InGaN/GaN quantum-well structures of various silicon-doping conditions [J].

Cheng, YC ;

Lin, EC ;

Wu, CM ;

Yang, CC ;

Yang, JR ;

Rosenauer, A ;

Ma, KJ ;

Shi, SC ;

Chen, LC ;

Pan, CC ;

Chyi, JI .

APPLIED PHYSICS LETTERS, 2004, 84 (14) :2506-2508

[3] Time-resolved photoluminescence of InxGa1-xN/GaN multiple quantum well structures:: Effect of Si doping in the barriers -: art. no. 245339 [J].

Choi, CK ;

Kwon, YH ;

Little, BD ;

Gainer, GH ;

Song, JJ ;

Chang, YC ;

Keller, S ;

Mishra, UK ;

DenBaars, SP .

PHYSICAL REVIEW B, 2001, 64 (24)

[4] Surface plasmon-enhanced photoluminescence from a single quantum well [J].

Hecker, NE ;

Hopfel, RA ;

Sawaki, N ;

Maier, T ;

Strasser, G .

APPLIED PHYSICS LETTERS, 1999, 75 (11) :1577-1579

[5] Dependence of composition fluctuation on indium content in InGaN/GaN multiple quantum wells [J].

Lin, YS ;

Ma, KJ ;

Hsu, C ;

Feng, SW ;

Cheng, YC ;

Liao, CC ;

Yang, CC ;

Chou, CC ;

Lee, CM ;

Chyi, JI .

APPLIED PHYSICS LETTERS, 2000, 77 (19) :2988-2990

[6] Quasiregular quantum-dot-like structure formation with postgrowth thermal annealing of InGaN/GaN quantum wells [J].

Lin, YS ;

Ma, KJ ;

Hsu, C ;

Chung, YY ;

Liu, CW ;

Feng, SW ;

Cheng, YC ;

Yang, CC ;

Mao, MH ;

Chuang, HW ;

Kuo, CT ;

Tsang, JS ;

Weirich, TE .

APPLIED PHYSICS LETTERS, 2002, 80 (14) :2571-2573

[7]

Neogi A, 2002, PHYS REV B, V66, DOI 10.1103/PhysRevB.66.153305

[8] Surface plasmon enhanced spontaneous emission rate of InGaN/GaN quantum wells probed by time-resolved photoluminescence spectroscopy [J].

Okamoto, K ;

Niki, I ;

Scherer, A ;

Narukawa, Y ;

Mukai, T ;

Kawakami, Y .

APPLIED PHYSICS LETTERS, 2005, 87 (07)

[9] Surface-plasmon-enhanced light emitters based on InGaN quantum wells [J].

Okamoto, K ;

Niki, I ;

Shvartser, A ;

Narukawa, Y ;

Mukai, T ;

Scherer, A .

NATURE MATERIALS, 2004, 3 (09) :601-605

[10] Investigation of the unusual temperature dependence of InGaN/GaN quantum well photoluminescence over a range of emission energies [J].

Pecharromán-Gallego, R ;

Martin, RW ;

Watson, IM .

JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2004, 37 (21) :2954-2961