Nanostructures and carrier localization behaviors of green-luminescence InGaN/GaN quantum-well structures of various silicon-doping conditions

被引：51

作者：

Cheng, YC

Lin, EC

Wu, CM

Yang, CC

Yang, JR

Rosenauer, A

Ma, KJ

Shi, SC

Chen, LC

Pan, CC

Chyi, JI

机构：

[1] Natl Taiwan Univ, Grad Inst Electroopt Engn, Taipei 10764, Taiwan

[2] Natl Taiwan Univ, Grad Inst Elect Engn, Taipei 10764, Taiwan

[3] Natl Taiwan Univ, Dept Elect Engn, Taipei 10764, Taiwan

[4] Natl Taiwan Univ, Dept Mat Sci & Engn, Taipei 10764, Taiwan

[5] Univ Karlsruhe, Lab Elektronenmikroskopie, D-76128 Karlsruhe, Germany

[6] Chung Hua Univ, Dept Mech Engn, Hsinchu, Taiwan

[7] Natl Taiwan Univ, Ctr Condensed Matter Sci, Taipei 10764, Taiwan

[8] Natl Cent Univ, Dept Elect Engn, Chungli 32054, Taiwan

来源：

APPLIED PHYSICS LETTERS | 2004年 / 84卷 / 14期

关键词：

D O I：

10.1063/1.1690872

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The results of photoluminescence (PL), detection-energy-dependent photoluminescence excitation (DEDPLE), excitation-energy-dependent photoluminescence (EEDPL), and strain state analysis (SSA) of three InGaN/GaN quantum-well (QW) samples with silicon doping in the well, barrier and an undoped structure are compared. The SSA images show strongly clustering nanostructures in the barrier-doped sample and relatively weaker composition fluctuations in the undoped and well-doped samples. Differences in silicon doping between the samples give rise to the differences in DEDPLE and EEDPL spectra, as a result of the differences in carrier localization. In addition, the PL results provide us clues for speculating that the S-shaped PL peak position behavior is dominated by the quantum-confined Stark effect in an undoped InGaN/GaN QW structure. (C) 2004 American Institute of Physics.

引用

页码：2506 / 2508

页数：3

共 13 条

[1] Mechanisms for photon-emission enhancement with silicon doping in InGaN/GaN quantum-well structures [J].