Mechanisms for photon-emission enhancement with silicon doping in InGaN/GaN quantum-well structures

被引:17
作者
Cheng, YC [1 ]
Tseng, CH
Hsu, C
Ma, KJ
Feng, SW
Lin, EC
Yang, CC
Chyi, JI
机构
[1] Natl Taiwan Univ, Grad Inst Electro Opt Engn, Taipei, Taiwan
[2] Natl Def Univ, Chung Cheng Inst Technol, Dept Engn Mech, Taoyuan, Taiwan
[3] Chung Hua Univ, Dept Mech Engn, Hsinchu, Taiwan
[4] Natl Taiwan Univ, Dept Elect Engn, Grad Inst Electro Opt Engn, Taipei, Taiwan
[5] Natl Cent Univ, Dept Elect Engn, Chungli 32054, Taiwan
关键词
photon emission; silicon doping; quantum-well structures; InGaN/GaN;
D O I
10.1007/s11664-003-0161-8
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Material and optical analyses of three InGaN/GaN quantum-well (QW) samples with different silicon-doping conditions were conducted. Quantum-dot (QD) structures were observed in samples of silicon doping either in barriers or wells. The calibrated-radiative lifetimes in both silicon-doped samples showed the consistent trend of the formation of zero-dimensional (0-D) structure upon silicon doping. In optical characterization, the barrier-doped sample showed a blueshift of the photoluminescence (PL) peak, enhancement of integrated PL intensity, reduction of Stokes shift (SS), decrease of carrier-activation energy, and shortening of PL decay time. Except the insignificant PL peak shift, the well-doped sample showed similar trends, although they are not as prominent as the barrier-doped sample. Such results mainly originated from the reduction of the quantum-confined Stark effect (QCSE) within the clusters. Contrary to the interpretation in the past, the major mechanism for QCSE reduction is due to strain relaxation, instead of carrier screening, in conjunction with the formation of QD structures. Such a conclusion is supported by the result of smaller changes of optical behavior in the well-doped sample, in which carrier screening is expected to be more significant. In this sample, besides strain relaxation, enhanced carrier localization (CL) might represent another important mechanism for photon-emission improvement.
引用
收藏
页码:375 / 381
页数:7
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