The growth of the CdxZn1-xTe epilayers by low-pressure metalorganic vapor-phase epitaxy

被引：2

作者：

Zhang, ZZ ^{[1
]}

Shen, DZ ^{[1
]}

Shan, CX ^{[1
]}

Zhang, JY ^{[1
]}

Lu, YM ^{[1
]}

Liu, YC ^{[1
]}

Fan, XW ^{[1
]}

机构：

[1] Chinese Acad Sci, Changchun Int Opt Fine Mech & Phys, Key Lab Excited State Proc, Changchun 130022, Peoples R China

来源：

THIN SOLID FILMS | 2003年 / 429卷 / 1-2期

基金：

中国国家自然科学基金;

关键词：

metalorganic vapor-phase epitaxy; CdxZn1-xTe epilayer; substrate temperature; Cd content;

D O I：

10.1016/S0040-6090(03)00145-7

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In this paper, CdxZn1-xTe epilayers with different Cd contents ranging from 0 to 1 were grown on GaAs (10 0) substrates by low-pressure metalorganic vapor-phase epitaxy. The CdxZn1-xTe epilayers were characterized by using the X-ray diffraction, scanning electron microscopy and photoluminescence measurements. When the flow rates of the precursors were kept at constants, the Cd content in the CdxZn1-xTe epilayers decreased with the increase of the substrate temperature. This phenomenon was considered to be related to absorption and desorption characters of the reactants. (C) 2003 Elsevier Science B.V. All rights reserved.

引用

页码：211 / 215

页数：5

共 14 条

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