Silicon-induced faceting of vicinal GaAs(001)

被引:4
作者
Brennan, S [1 ]
Stephenson, GB
Fuoss, PH
Kisker, DW
Lavoie, C
Evans-Lutterodt, KL
机构
[1] Stanford Linear Accelerator Ctr, Stanford Synchrotron Radiat Lab, Stanford, CA 94309 USA
[2] Argonne Natl Lab, Div Mat Sci, Argonne, IL 60439 USA
[3] AT&T Labs, Florham Park, NJ 07932 USA
[4] Cielo Commun Inc, Broomfield, CO 80021 USA
[5] IBM Corp, Div Res, TJ Watson Res Ctr, Yorktown Heights, NY 10598 USA
[6] Lucent Technol, Murray Hill, NJ 07974 USA
关键词
D O I
10.1063/1.1289482
中图分类号
O59 [应用物理学];
学科分类号
摘要
This article presents in situ x-ray diffraction studies of the evolution of the morphology of 0.5 degrees-miscut vicinal GaAs(001) surfaces during and following undoped and silicon-doped growth using organometallic vapor-phase epitaxy. Undoped growth leads to ordered monolayer steps. However, growth in the presence of silicon destabilizes this surface morphology and triggers faceting. Coarsening of the facet size proceeds even after the growth has stopped and results in large singular regions of GaAs(001) surface separated by step bunches. Dosing the surface with silicon without growing material does not trigger faceting. Growth of undoped GaAs on faceted surfaces recovers the initial state of ordered monolayer steps. (C) 2000 American Institute of Physics. [S0021-8979(00)06419-7].
引用
收藏
页码:3367 / 3376
页数:10
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