Growth of zinc blende MnS and MnS heterostructures by MBE using ZnS as a sulfur source

被引：36

作者：

David, L ^{[1
]}

Bradford, C ^{[1
]}

Tang, X ^{[1
]}

Graham, TCM ^{[1
]}

Prior, KA ^{[1
]}

Cavenett, BC ^{[1
]}

机构：

[1] Heriot Watt Univ, Sch Engn & Phys Sci, Edinburgh EH14 4AS, Midlothian, Scotland

来源：

JOURNAL OF CRYSTAL GROWTH | 2003年 / 251卷 / 1-4期

关键词：

X-ray diffraction; molecular beam epitaxy; sulfides; semiconducting II-VI materials;

D O I：

10.1016/S0022-0248(02)02205-4

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Zinc blende (ZB) MnS has been grown by molecular beam epitaxy (MBE) on GaAs (10 0) substrates by a novel technique, developed previously for the growth of ZB MgS, which uses ZnS as a source of sulfur. Layers of up to 132 nm thick have been produced without any degradation of the crystal structure. Photoluminescence (PL) of single layers shows emission at 2.13 eV, indicating the presence of tetrahedrally co-ordinated Mn atoms. The lattice constant was found to be 0.5559 +/- 0.0002 nm. Heterostructures of MnS/ZnSe and MgS/MnS have been fabricated and PL shows an electron confinement energy of 225 meV for a 4 nm MnS/ZnSe heterostructure. (C) 2002 Elsevier Science B.V. All rights reserved.

引用

页码：591 / 595

页数：5

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