Fabrication of graphene nanoribbons via nanowire lithography

被引：26

作者：

Fasoli, A. ^{[1
]}

Colli, A. ^{[2
]}

Lombardo, A. ^{[1
]}

Ferrari, A. C. ^{[1
]}

机构：

[1] Univ Cambridge, Dept Engn, Cambridge CB3 0FA, England

[2] Univ Cambridge, Nanosci Ctr, Nokia Res Ctr Cambridge UK, Cambridge CB3 0FF, England

来源：

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS | 2009年 / 246卷 / 11-12期

基金：

欧洲研究理事会;

关键词：

CARBON NANOTUBES; NANOGRAPHITE RIBBONS; SILICON NANOWIRES; GRAPHITE; ELECTRON; EDGE; DEPENDENCE; PHASE; STATE; FILMS;

D O I：

10.1002/pssb.200982356

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Graphene nanoribbons (GNRs) are the counterpart of nanotubes in graphene nanoelectronics. The search for a cheap, parallel, and deterministic technique for practical implementation of these structures is still open. Nanowire lithography (NWL) consists in using nanowires (NWs) as etch masks to transfer their one-dimensional morphology to an underlying substrate. Here, we show that oxidized silicon NWs (SiNWs) are a simple and compatible system to implement NWL on graphene. The SiNWs morphology is transferred onto a graphene flake by a low-power O-2 plasma in a deep-reactive-ion-etcher. The process leads to conformal GNRs with diameter comparable to the overlaying NW lateral dimensions. The diameter can be further reduced by Multiple O-2 etching steps. Field-effect measurements show the transition to a semiconductor for low diameters. (C) 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

引用

页码：2514 / 2517

页数：4

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