Single-crystal II-VI on Si single-junction and tandem solar cells

被引：67

作者：

Carmody, M. ^{[1
]}

Mallick, S. ^{[1
]}

Margetis, J. ^{[1
]}

Kodama, R. ^{[1
]}

Biegala, T. ^{[1
]}

Xu, D. ^{[1
]}

Bechmann, P. ^{[1
]}

Garland, J. W. ^{[1
]}

Sivananthan, S. ^{[1
]}

机构：

[1] EPIR Technol Inc, Bolingbrook, IL 60440 USA

来源：

APPLIED PHYSICS LETTERS | 2010年 / 96卷 / 15期

关键词：

cadmium compounds; energy gap; II-VI semiconductors; semiconductor epitaxial layers; semiconductor junctions; solar cells; thin film devices; wide band gap semiconductors; zinc compounds; MOLECULAR-BEAM EPITAXY; CD1-XZNXTE; CDTE(111)B; SILICON; SI(111); GROWTH; LIMITS; CDTE;

D O I：

10.1063/1.3386529

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

CdTe is one of the leading materials used in solar photovoltaics. However, the maximum reported CdTe cell efficiencies are considerably lower than the theoretically expected efficiencies for the similar to 1.48 eV CdTe band gap. We report a class of single crystal CdTe-based solar cells grown epitaxially on crystalline Si that show promise for enhancing the efficiency and greatly lowering the cost per watt of single-junction and multijunction solar cells. The current-voltage results for our CdZnTe on Si solar cells show open-circuit voltages significantly higher than previously reported for any II-VI cells and as close to the thermodynamic limit as the best III-V-based cells.

引用

页数：3

共 22 条

[1] PLASMA NITROGEN DOPING OF ZNTE, CD1-XZNXTE, AND CDTE BY MOLECULAR-BEAM EPITAXY [J].