Near ideal, high barrier, Au-nGaN Schottky contacts

被引：17

作者：

Maffeis, TGG ^{[1
]}

Simmonds, MC

Clark, SA

Peiro, F

Haines, P

Parbrook, PJ

机构：

[1] Sheffield Hallam Univ, Inst Mat Res, Sheffield S1 1WB, S Yorkshire, England

[2] Univ Barcelona, Dept Elect, E-08028 Barcelona, Spain

[3] Univ Sheffield, Dept Elect & Elect Engn, Sheffield S1 3JD, S Yorkshire, England

来源：

JOURNAL OF PHYSICS D-APPLIED PHYSICS | 2000年 / 33卷 / 20期

关键词：

D O I：

10.1088/0022-3727/33/20/101

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Gold Schottky contacts formed in situ on n-type GaN after a 600 degreesC anneal have been characterized by current-voltage (I-V) measurements and x-ray photoelectron spectroscopy (XPS). The mean Schottky barrier height and lowest ideality factor were found to be 1.24 eV and 1.03, respectively, as measured by I-V. The highest barrier measured was 1.35 eV with an ideality factor of 1.12. XPS data showed that the 600 degreesC anneal produced an upward band bending of 0.35 eV, the subsequent gold deposition caused a further band bending of 0.25 eV in the same direction. Our results can be interpreted in terms of the Cowley-Sze model and suggest a high density of acceptor states at the bare GaN surface.

引用

页码：L115 / L118

页数：4

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