Silicon carbide high frequency devices

被引：44

作者：

Weitzel, CE ^{[1
]}

机构：

[1] Motorola Inc, Phoenix Corp, Res Labs, Tempe, AZ 85284 USA

来源：

SILICON CARBIDE, III-NITRIDES AND RELATED MATERIALS, PTS 1 AND 2 | 1998年 / 264-2卷

关键词：

silicon; gallium arsenide; silicon carbide; gallium nitride; high-frequency; high-power FET; MESFET; HFET; SIT;

D O I：

10.4028/www.scientific.net/MSF.264-268.907

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

4H-SiC MESFET's (MEtal Semiconductor Field-Effect Transistor) have achieved the highest f(max) (greater than or equal to 42 GHz) and the highest power densities, 3.3 W/mm at 850 MHz (CW) and at 10 GHz (pulsed). On the other hand, 4H-SiC SIT's (Static Induction Transistor) have achieved the highest output power, 450 W (pulsed) at 600 MHz and 38 W (pulsed) at 3 GHz. Moreover a one kilowatt, 600 MHz SiC power module containing four SIT's with a total source periphery of 94.5 cm has been demonstrated.

引用

页码：907 / 912

页数：6

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