Fabrication of GeO2 layers using a divalent Ge precursor

被引：88

作者：

Perego, M.

Scarel, G.

Fanciulli, M.

Fedushkin, I. L.

Skatova, A. A.

机构：

[1] CNR, INFM, MDM Natl Lab, I-20041 Agrate Brianza, Italy

[2] Russian Acad Sci, GA Razuvaev Inst Organomet Chem, Nizhnii Novgorod 603950, Russia

来源：

APPLIED PHYSICS LETTERS | 2007年 / 90卷 / 16期

基金：

俄罗斯基础研究基金会;

关键词：

D O I：

10.1063/1.2723684

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Good quality and perfectly stoichiometric GeO2 layers are promising interlayers to be implemented in alternative devices based on high dielectric constant oxide/Ge(100). In this work, the authors report on the growth by atomic layer deposition of GeO2 films using a divalent Ge precursor combined with O-3. The films are composed of smooth and perfectly stoichiometric GeO2. The contamination level is extremely low. The deposited GeO2 films have a band gap of 5.81 +/- 0.04 eV. The conduction and valence band offsets at the GeO2/Ge heterojunction are found to be 0.6 +/- 0.1 and 4.5 +/- 0.1 eV, respectively.

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页数：3

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