Effects of interface traps in silicon-quantum-dots-based memory structures

被引：9

作者：

Yuan, XL

Shi, Y ^{[1
]}

Gu, SL

Zhu, JM

Zheng, YD

Kenichi, S

Hiroki, I

Toshiro, H

机构：

[1] Nanjing Univ, Dept Phys, Nanjing 210093, Peoples R China

[2] Nanjing Univ, Solid State Microstruct Lab, Nanjing 210093, Peoples R China

[3] Univ Tokyo, Inst Ind Sci, Tokyo 1068558, Japan

来源：

PHYSICA E | 2000年 / 8卷 / 02期

关键词：

silicon quantum dots; MOS memory; interface trap;

D O I：

10.1016/S1386-9477(00)00138-7

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Effects of interface traps in silicon-quantum-dots(Si-QDs) based memory structures have been investigated using capacitance-voltage measurement. The observations demonstrate that both the interface traps at Si-QDs and the interface states at SiO2/Si-substrate have strong influences on the charge storage characteristics. The observed long-term charge retention behavior is analyzed in terms of direct charge-tunneling from deep trapping centers at Si-QDs to the interface states at SiO2/Si-substrate, considering three-dimensional quantum confinement and Coulomb charging effects. (C) 2000 Elsevier Science B.V. All rights reserved.

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收藏

页码：189 / 193

页数：5

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