Formation of columnar (In,Ga)As quantum dots on GaAs(100)

被引：49

作者：

He, J ^{[1
]}

Nötzel, R ^{[1
]}

Offermans, P ^{[1
]}

Koenraad, PM ^{[1
]}

Gong, Q ^{[1
]}

Hamhuis, GJ ^{[1
]}

Eijkemans, TJ ^{[1
]}

Wolter, JH ^{[1
]}

机构：

[1] Eindhoven Univ Technol, EiTT COBRA, Interuniv Res Inst, NL-5600 MB Eindhoven, Netherlands

来源：

APPLIED PHYSICS LETTERS | 2004年 / 85卷 / 14期

关键词：

D O I：

10.1063/1.1801172

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Columnar (In,Ga)As quantum dots (QDs) with homogeneous composition and shape in the growth direction are realized by molecular-beam epitaxy on GaAs(100) substrates. The columnar (In,Ga)As QDs are formed on InAs seed QDs by alternating deposition of thin GaAs intermediate layers and monolayers of InAs with extended growth interruptions after each layer. The height of the columnar (In,Ga)As QDs is controlled by varying the number of stacked GaAs/InAs layers. The structural and optical properties are studied by cross-sectional scanning tunneling microscopy, atomic force microscopy, and photoluminescence spectroscopy. With increase of the aspect ratio of the columnar QDs, the emission wavelength is redshifted and the linewidth is reduced. (C) 2004 American Institute of Physics.

引用

页码：2771 / 2773

页数：3

共 14 条

[1] Determination of the shape and indium distribution of low-growth-rate InAs quantum dots by cross-sectional scanning tunneling microscopy [J].

Bruls, DM ;

Vugs, JWAM ;

Koenraad, PM ;

Salemink, HWM ;

Wolter, JH ;

Hopkinson, M ;

Skolnick, MS ;

Long, F ;

Gill, SPA .

APPLIED PHYSICS LETTERS, 2002, 81 (09) :1708-1710

[2] InAs/GaAs quantum dots optically active at 1.5 μm [J].

da Silva, MJ ;

Quivy, AA ;

Martini, S ;

Lamas, TE ;

da Silva, ECF ;

Leite, JR .

APPLIED PHYSICS LETTERS, 2003, 82 (16) :2646-2648

[3] Coupled InAs/GaAs quantum dots with well-defined electronic shells [J].

Fafard, S ;

Spanner, M ;

McCaffrey, JP ;

Wasilewski, ZR .

APPLIED PHYSICS LETTERS, 2000, 76 (16) :2268-2270

[4] Leveling and rebuilding:: An approach to improve the uniformity of (In,Ga)As quantum dots [J].

Gong, Q ;

Nötzel, R ;

Hamhuis, GJ ;

Eijkemans, TJ ;

Wolter, JH .

APPLIED PHYSICS LETTERS, 2002, 81 (10) :1887-1889

[5] Surface morphology evolution during the overgrowth of large InAs-GaAs quantum dots [J].

Joyce, PB ;

Krzyzewski, TJ ;

Bell, GR ;

Jones, TS .

APPLIED PHYSICS LETTERS, 2001, 79 (22) :3615-3617

[6] Shape and surface morphology changes during the initial stages of encapsulation of InAs/GaAs quantum dots [J].

Joyce, PB ;

Krzyzewski, TJ ;

Steans, PH ;

Bell, GR ;

Neave, JH ;

Jones, TS .

SURFACE SCIENCE, 2001, 492 (03) :345-353

[7]

Kita T, 2002, JPN J APPL PHYS 2, V41, pL1143, DOI 10.1143/JJAP.4l.L1143

[8] Structural and optical studies of vertically aligned InAs/GaAs self-assembled quantum dots [J].

Migliorato, MA ;

Wilson, LR ;

Mowbray, DJ ;

Skolnick, MS ;

Al-Khafaji, M ;

Cullis, AG ;

Hopkinson, M .

JOURNAL OF APPLIED PHYSICS, 2001, 90 (12) :6374-6378

[9] 1.3-μm CW lasing of InGaAs-GaAs quantum dots at room temperature with a threshold current of 8 mA [J].

Mukai, K ;

Nakata, Y ;

Otsubo, K ;

Sugawara, M ;

Yokoyama, N ;

Ishikawa, H .

IEEE PHOTONICS TECHNOLOGY LETTERS, 1999, 11 (10) :1205-1207

[10] Molecular beam epitaxial growth of InAs self-assembled quantum dots with light-emission at 1.3 μm [J].

Nakata, Y ;

Mukai, K ;

Sugawara, M ;

Ohtsubo, K ;

Ishikawa, H ;

Yokoyama, N .

JOURNAL OF CRYSTAL GROWTH, 2000, 208 (1-4) :93-99

← 1 2 →