CMOS-compatible fabrication of porous silicon gas sensors and their readout electronics on the same chip

被引:28
作者
Barillaro, G. [1 ]
Bruschi, P. [1 ]
Pieri, F. [1 ]
Strambini, L. P. [1 ]
机构
[1] Univ Pisa, Dipartimento Ingn Informaz, I-56126 Pisa, Italy
来源
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 2007年 / 204卷 / 05期
关键词
D O I
10.1002/pssa.200674370
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
In this work, integration on the same chip of porous silicon gas sensors along with their driving/readout electronic circuits by using an industrial microelectronic process is demonstrated. To ensure maximum compatibility, the porous silicon formation is performed after the integrated circuit fabrication flow is completed. The chip contains three CMOS operational amplifiers, a band-gap voltage reference, an integrated temperature sensor and several porous silicon-based NO, sensors. The simultaneous functionality of the electronics and the sensor is demonstrated by using various circuit blocks to implement a simple kdriving/readout electronic interface for the sensor. (c) 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
引用
收藏
页码:1423 / 1428
页数:6
相关论文
共 10 条
[1]  
BAKER R, 1998, CMOS, P474
[2]   Low-concentration NO2 detection with an adsorption porous silicon FET [J].
Barillaro, G ;
Diligenti, A ;
Nannini, A ;
Strambini, LM ;
Comini, E ;
Sberveglieri, G .
IEEE SENSORS JOURNAL, 2006, 6 (01) :19-23
[3]   SILICON QUANTUM WIRE ARRAY FABRICATION BY ELECTROCHEMICAL AND CHEMICAL DISSOLUTION OF WAFERS [J].
CANHAM, LT .
APPLIED PHYSICS LETTERS, 1990, 57 (10) :1046-1048
[4]   Trends in porous silicon biomedical devices - Tuning microstructure and performance trade-offs in optical biosensors [J].
DeLouise, LA ;
Miller, BL .
OPTOELECTRONIC INTEGRATION ON SILICON, 2004, 5357 :111-125
[5]   Silicon-based visible light-emitting devices integrated into microelectronic circuits [J].
Hirschman, KD ;
Tsybeskov, L ;
Duttagupta, SP ;
Fauchet, PM .
NATURE, 1996, 384 (6607) :338-341
[6]   A COMPACT POWER-EFFICIENT 3-V CMOS RAIL-TO-RAIL INPUT/OUTPUT OPERATIONAL-AMPLIFIER FOR VLSI CELL LIBRARIES [J].
HOGERVORST, R ;
TERO, JP ;
ESCHAUZIER, RGH ;
HUIJSING, JH .
IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1994, 29 (12) :1505-1513
[7]   FIPOS (FULL ISOLATION BY POROUS OXIDIZED SILICON) TECHNOLOGY AND ITS APPLICATION TO LSIS [J].
IMAI, K ;
UNNO, H .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1984, 31 (03) :297-302
[8]   Microspectrometer based on a tunable optical filter of porous silicon [J].
Lammel, G ;
Schweizer, S ;
Renaud, P .
SENSORS AND ACTUATORS A-PHYSICAL, 2001, 92 (1-3) :52-59
[9]   Sensitive, selective, and analytical improvements to a porous silicon gas sensor [J].
Lewis, SE ;
DeBoer, JR ;
Gole, JL ;
Hesketh, PJ .
SENSORS AND ACTUATORS B-CHEMICAL, 2005, 110 (01) :54-65
[10]   Second- and third-harmonic generation in birefringent photonic crystals and microcavities based on anisotropic porous silicon [J].
Soboleva, IV ;
Murchikova, EM ;
Fedyanin, AA ;
Aktsipetrov, OA .
APPLIED PHYSICS LETTERS, 2005, 87 (24) :1-3