Transport coefficients of AlGaN/GaN heterostructures

被引：3

作者：

Ahoujja, M ^{[1
]}

Mitchel, WC

Elhamri, S

Newrock, RS

Mast, DB

Redwing, JM

Tischler, MA

Flynn, JS

机构：

[1] USAF, Wright Lab, MLPO, W PAFB, Wright Patterson AFB, OH 45433 USA

[2] Univ Dayton, Dept Phys, Dayton, OH 45469 USA

[3] Univ Cincinnati, Dept Phys, Cincinnati, OH 45221 USA

[4] Adv Technol Mat Inc, Danbury, CT 06810 USA

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1998年 / 27卷 / 04期

关键词：

AlGaN/GaN; heterostructure; transport;

D O I：

10.1007/s11664-998-0389-4

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have experimentally determined the effective mass (m*) of GaN, the classical (tau(e)), and quantum (tau(q)) scattering times for a two-dimensional electron gas residing at the interface of an AlGaN/GaN heterostructure, using the Shubnikov-de Haas effect. The ratio of the two scattering times, tau(e)/tau(q), suggests that, at low temperatures, the scattering mechanism limiting the mobility is due to remote ionized impurities located in AlGaN. This study should provide sample growers with information useful for improving the quality of the nitride heterostuctures.

引用

页码：210 / 214

页数：5

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