Optimization of plasma-deposited silicon oxinitride films for optical channel waveguides

被引:28
作者
Gorecki, C [1 ]
机构
[1] Univ Franche Comte, Lab Opt PM Duffieux, CNRS, UMR 6603, F-25030 Besancon, France
关键词
integrated optics; Si micromachining; channel waveguide;
D O I
10.1016/S0143-8166(00)00024-5
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
In view of applications of SiOxNy thin films in MOEMS technology, a study of the optomechanical characteristics of the PECVD deposited material are investigated. To optimize the quality of SiOxNy layers we establish the relationship between the chemical properties, optical performances, micromechanical stress, and growth parameters of deposited films. To use the SiOxNy thin film for the core layer of a strip-loaded waveguide, we propose preparation conditions of SiOxNy that offer a low-loss optical waveguide with well-controlled refractive index, based on a low-internal stress multilayer structure. (C) 2000 Elsevier Science Ltd. All rights reserved.
引用
收藏
页码:15 / 20
页数:6
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