Continuous-wave operation of m-plane InGaN multiple quantum well laser diodes

被引：142

作者：

Okamoto, Kuniyoshi ^{[1
]}

Ohta, Hiroaki

Chichibu, Shigefusa F.

Ichihara, Jun

Takasu, Hidemi

机构：

[1] ROHM Co Ltd, Res & Dev Headquarters, Kyoto 6158585, Japan

[2] Univ Tsukuba, Inst Appl Phys, Tsukuba, Ibaraki 3058573, Japan

[3] Univ Tsukuba, Century Ctr Excellence Off 21, Tsukuba, Ibaraki 3058573, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 2007年 / 46卷 / 8-11期

关键词：

nonpolar; in-plane; InGaN; laser diode; GaN bulk substrate; polarized light;

D O I：

10.1143/JJAP.46.L187

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Continuous-wave (CW) operation of nonpolar m-plane InGaN/GaN laser diodes (LDs) with the lasing wavelengths approximately 400 nm was demonstrated. The threshold current was 36 mA (4.0 kA/cm(2)) for the CW operation [28 mA (3.1 kA/cm(2)) for pulsed mode], being comparable to that of conventional c-plane violet LDs. Both the LDs with the stripes parallel to a- and c-axes showed TE mode operation, according to the polarization selection rules of the transitions in strained InGaN. The c-axis stripe LDs exhibited lower threshold current density, since the lowest energy transition is allowed. As is the case with the in-plane light emitting diodes fabricated on the free-standing in-plane GaN bulk crystals [Okamoto et al.: Jpn. J. Appl. Phys. 45 (2006) L1197], the LDs shown in this paper did not have distinct dislocations, stacking faults, or macroscopic cracks. Nonpolar in-plane GaN-based materials are coming into general use.

引用

页码：L187 / L189

页数：3

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