Temperature dependence of gate-leakage current in AlGaN/GaN high-electron-mobility transistors

被引：84

作者：

Arulkumaran, S ^{[1
]}

Egawa, T ^{[1
]}

Ishikawa, H ^{[1
]}

Jimbo, T ^{[1
]}

机构：

[1] Nagoya Inst Technol, Res Ctr Microstruct Devices, Showa Ku, Nagoya, Aichi 4668555, Japan

来源：

APPLIED PHYSICS LETTERS | 2003年 / 82卷 / 18期

关键词：

D O I：

10.1063/1.1571655

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report on the studies of the temperature dependence of gate-leakage current in AlGaN/GaN high-electron-mobility transistors (HEMTs) for the temperature range 20-400 degreesC. The results show that the temperature dependence of gate-leakage current for AlGaN/GaN HEMTs at subthreshold regime (V-GS=-6.5 V) have both negative and positive trends. It has been observed that the leakage current decreases with the temperature up to 80 degreesC. Above 80 degreesC, the leakage current increases with the temperature. The negative temperature dependence of leakage current with the activation energy +0.61 eV is due to the impact ionization. The positive temperature dependence of leakage current with the activation energy -0.20 eV is due to the surface related traps, and the activation energy -0.99 eV is due to the temperature assisted tunneling mechanism. The drain voltage at a fixed drain-leakage current reveals the occurrence of both positive (+0.28 V/K) and negative (-0.53 V/K) temperature coefficients. (C) 2003 American Institute of Physics.

引用

页码：3110 / 3112

页数：3

共 17 条

[1] Temperature dependence of the breakdown voltage for reverse-biased GaN p-n-n+ diodes [J].