Synchrotron radiation photoemission study of S-passivated GaAs surfaces

被引：2

作者：

Ding, XM ^{[1
]}

Yuan, ZL

Hu, HT

Li, ZS

Chen, YF

Chen, XY

Cao, XA

Hou, XY

Wang, X

Lu, ED

Xu, SH

Xu, PS

Zhang, XY

机构：

[1] Fudan Univ, Surface Phys Lab, Shanghai 200433, Peoples R China

[2] Univ Sci & Technol China, Natl Synchrotron Radiat Lab, Hefei 230019, Peoples R China

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1997年 / 133卷 / 1-4期

关键词：

photoemission; III-V compounds; surface passivation; sulfide treatment;

D O I：

10.1016/S0168-583X(97)00468-0

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

Dipping of GaAs (100) wafers in S2Cl2 or S2Cl2 + CCl4 solution has been previously found effective to passivating the GaAs surface. Application of synchrotron radiation photoelectron spectroscopy (SRPES) to such a surface reveals the presence of various S-containing species on the surface. Although bulk-like AsxSy phases prevail on the as-treated surface, annealing of the sample to above 150 degrees C results in a thorough transfer of S atoms from As-S to GaS, indicating that steady passivation is associated with the presence of Ga-S bonds at the surface. (C) 1997 Elsevier Science B.V.

引用

页码：90 / 93

页数：4

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