High-performance chemical-bath-deposited zinc oxide thin-film transistors

被引：41

作者：

Redinger, David ^{[1
]}

Subramanian, Vivek ^{[1
]}

机构：

[1] Univ Calif Berkeley, Dept Elect Engn & Comp Sci, Berkeley, CA 94720 USA

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2007年 / 54卷 / 06期

关键词：

driver circuits; flat-panel displays; light-emitting diode (LED) displays; thin-film transistors (TFTs); zinc compounds; ZNO;

D O I：

10.1109/TED.2007.895861

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Solution-processed transparent zinc oxide (ZnO) transistors are demonstrated using a chemical bath deposition process for ZnO deposition. The process is glass compatible and amenable to producing fully transparent electronics. Mobility as high as 3.5 cm(2)/V . s with on-off ratios of similar to 10(5) is realized. The transparency of ZnO allows for complete coverage of the pixel by the pixel drive transistors; analysis shows that the performance achieved herein is sufficient even to drive high-brightness organic light-emitting diode (OLED) displays by exploiting the high mobility and optical transparency of these devices. This makes this technology extremely attractive for use in active-matrix OLED display applications.

引用

页码：1301 / 1307

页数：7

共 14 条

[1]

Blochwitz-Nimoth J., 1994, Proceedings of SPIE, V5214, P172

[2] High field-effect mobility zinc oxide thin film transistors produced at room temperature [J].

Fortunato, E ;

Pimentel, A ;

Pereira, L ;

Gonçalves, A ;

Lavareda, G ;

Aguas, H ;

Ferreira, I ;

Carvalho, CN ;

Martins, R .

JOURNAL OF NON-CRYSTALLINE SOLIDS, 2004, 338 :806-809

[3] ZnO-based transparent thin-film transistors [J].

Hoffman, RL ;

Norris, BJ ;

Wager, JF .

APPLIED PHYSICS LETTERS, 2003, 82 (05) :733-735

[4] Does TFT mobility impact pixel size in AMOLED backplanes? [J].

Kumar, A ;

Nathan, A ;

Jabbour, GE .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2005, 52 (11) :2386-2394

[5]

KUMAR A, 2003, P I ELECTR ENG, V150, P322

[6] A novel current-scaling a-Si:H TFTs pixel electrode circuit for AM-OLEDs [J].

Lin, YC ;

Shieh, HPD ;

Kanicki, J .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2005, 52 (06) :1123-1131

[7] Transparent thin film transistors using ZnO as an active channel layer and their electrical properties [J].

Masuda, S ;

Kitamura, K ;

Okumura, Y ;

Miyatake, S ;

Tabata, H ;

Kawai, T .

JOURNAL OF APPLIED PHYSICS, 2003, 93 (03) :1624-1630

[8] A high-performance all-inkjetted organic transistor technology [J].

Molesa, SE ;

Volkman, SK ;

Redinger, DR ;

Vombrock, AD ;

Subramanian, V .

IEEE INTERNATIONAL ELECTRON DEVICES MEETING 2004, TECHNICAL DIGEST, 2004, :1072-1074

[9] Super-fine ink-jet printing: toward the minimal manufacturing system [J].

Murata, K ;

Matsumoto, J ;

Tezuka, A ;

Matsuba, Y ;

Yokoyama, H .

MICROSYSTEM TECHNOLOGIES-MICRO-AND NANOSYSTEMS-INFORMATION STORAGE AND PROCESSING SYSTEMS, 2005, 12 (1-2) :2-7

[10] a-Si:H back-plane electronics for medical Imaging and OLED displays [J].

Nathan, A ;

Sakariya, K ;

Karmi, KS ;

Servati, P ;

Kumar, A ;

Striakhilev, D .

2002 IEEE INTERNATIONAL CONFERENCE ON SEMICONDUCTOR ELECTRONICS, PROCEEDINGS, 2002, :15-21

← 1 2 →