Preparation of As-doped p-type ZnO films using a Zn3As2/ZnO target with pulsed laser deposition -: art. no. 062101

We report the preparation of arsenic doped p-type ZnO films using a Zn(3)AS(2)/ZnO target by pulsed laser deposition. Zn(3)AS(2) was used as a p-type dopant source material for arsenic doping in ZnO. The existence of As in the As-doped ZnO films was confirmed by the x-ray photoelectron spectroscopy study. The p-type behavior of the As-doped ZnO films was determined by the Hall and photoluminescence measurements. Room temperature Hall measurements revealed that the As-doped ZnO films exhibited p-type conductivity after being annealed at 200 degreesC in N-2 ambient for 2 min with the hole concentrations varied between 2.48 X 10(17) and 1.18 X 10(18) cm(-3). The resistivity and carrier mobility of the As-doped p-type ZnO films were in the range of 2.2-6.7 Omega cm and 0.83-11.4 cm(2/)V s, respectively. The low temperature photoluminescence measurements confirmed the peak associated with the neutral-acceptor bound exciton (A(0)X) emission in the As-doped p-type ZnO films. (C) 2005 American Institute of Physics.