Reflectance anisotropy spectroscopy study of the surface reconstructions of decapped InP(001)

被引:13
作者
Johal, TK
Barrett, SD
Hopkinson, M
Weightman, P
Power, JR
机构
[1] Univ Liverpool, Surface Sci Res Ctr, Liverpool L69 3BX, Merseyside, England
[2] Univ Sheffield, Dept Elect & Elect Engn, EPSRC 3 5 Semicond Facil, Sheffield S1 3JD, S Yorkshire, England
关键词
D O I
10.1063/1.366718
中图分类号
O59 [应用物理学];
学科分类号
摘要
A reflectance anisotropy spectroscopy (RAS) and low-energy electron diffraction study of the InP(001) surface is presented. The surface was prepared by thermal desorption of an As-P capped epilayer grown by molecular beam epitaxy. RA spectra have been monitored over a spectral range of 1.5-5.5 eV at regular intervals during thermal decapping and annealing up to the paint of decomposition (553-973 K). Each of the RA spectra of the surface reconstructions comprise positive (at 2.9 eV) and negative (at 1.8 eV) anisotropies which have been previously associated with P-and In-related bonding, respectively. Unlike other m-V (001) semiconductor surfaces, the evolution of different reconstructions cannot be explained in terms of a change in surface stoichiometry which involves loss of the anion species. In the case of InP(001) the P species contributes to the clean surface reconstruction from the early stages of decapping to the point of decomposition. (C) 1998 American Institute of Physics.
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页码:480 / 485
页数:6
相关论文
共 30 条
[1]   REFLECTANCE ANISOTROPY STUDIES OF THE GROWTH OF INP ON INP(001) AT ATMOSPHERIC PRESSURES USING TERTIARYBUTYLPHOSPHINE AND TRIMETHYLINDIUM [J].
ARMSTRONG, SR ;
FAN, GH ;
PEMBLE, ME ;
RIDHA, HHA ;
TURNER, AR .
SURFACE SCIENCE, 1994, 307 (1 -3 pt B) :1051-1056
[2]   ANISOTROPIES IN THE ABOVE BAND-GAP OPTICAL-SPECTRA OF CUBIC SEMICONDUCTORS [J].
ASPNES, DE ;
STUDNA, AA .
PHYSICAL REVIEW LETTERS, 1985, 54 (17) :1956-1959
[3]   AS CAPTURE AND THE GROWTH OF ULTRATHIN INAS LAYERS ON INP [J].
ASPNES, DE ;
TAMARGO, MC ;
BRASIL, MJSP ;
NAHORY, RE ;
SCHWARZ, SA .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1994, 12 (04) :1180-1185
[4]   DIELECTRIC FUNCTIONS AND OPTICAL-PARAMETERS OF SI, GE, GAP, GAAS, GASB, INP, INAS, AND INSB FROM 1.5 TO 6.0 EV [J].
ASPNES, DE ;
STUDNA, AA .
PHYSICAL REVIEW B, 1983, 27 (02) :985-1009
[5]   Mechanism for disorder on GaAs(001)-(2x4) surfaces [J].
Avery, AR ;
Goringe, CM ;
Holmes, DM ;
Sudijono, JL ;
Jones, TS .
PHYSICAL REVIEW LETTERS, 1996, 76 (18) :3344-3347
[6]   DETERMINATION OF THE SURFACE RELAXATION OF SC(0001) BY VIDEO LEED ANALYSIS [J].
BARRETT, SD ;
DHESI, SS ;
EVANS, MP ;
WHITE, RG .
MEASUREMENT SCIENCE AND TECHNOLOGY, 1993, 4 (01) :114-119
[7]   SCANNING-TUNNELING-MICROSCOPE STUDY OF THE ALPHA-PHASE AND BETA-PHASE OF THE GAAS(001)-(2X4) RECONSTRUCTION [J].
BROEKMAN, LD ;
LECKEY, RCG ;
RILEY, JD ;
STAMPFL, A ;
USHER, BF ;
SEXTON, BA .
PHYSICAL REVIEW B, 1995, 51 (24) :17795-17799
[8]   OPTICAL ANISOTROPY SPECTRA OF GAAS(001) SURFACES [J].
CHANG, YC ;
REN, SF ;
ASPNES, DE .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1992, 10 (04) :1856-1862
[9]   Semiconductor surface reconstruction: The structural chemistry of two-dimensional surface compounds [J].
Duke, CB .
CHEMICAL REVIEWS, 1996, 96 (04) :1237-1259
[10]   Scanning-tunneling-microscopy study of InP(001) surfaces prepared by UHV decapping of metal-organic vapor-phase-epitaxy-grown samples [J].
Esser, N ;
ReschEsser, U ;
Pristovsek, M ;
Richter, W .
PHYSICAL REVIEW B, 1996, 53 (20) :13257-13259