Early stages of oxygen precipitation in silicon:: The effect of hydrogen

被引：5

作者：

Markevich, VP

Murin, LI

Lindström, JL

Suezawa, M

机构：

[1] Byelarussian Acad Sci, Inst Solid State & Semicond Phys, Minsk 220072, BELARUS

[2] Lund Univ, Dept Solid State Phys, S-22100 Lund, Sweden

[3] Tohoku Univ, Inst Mat Res, Sendai, Miyagi 9808577, Japan

来源：

SEMICONDUCTORS | 2000年 / 34卷 / 09期

关键词：

D O I：

10.1134/1.1309404

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The formation of small oxygen clusters upon heat treatment at 280-375 degrees C was studied in crystalline silicon doped with hydrogen by high-temperature in-diffusion. The presence of hydrogen in concentrations of 10(15)-10(16) cm(-3) significantly enhances (by up to a factor of 10(6) at T less than or equal to 300 degrees C) the oxygen diffusivity in Si crystals. Possible mechanisms of interaction between O and H impurity atoms and the origin of hydrogen-enhanced oxygen diffusion in silicon are discussed. (C) 2000 MAIK "Nauka/Interperiodica".

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页码：998 / 1003

页数：6

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