An EPR study of defects induced in 6H-SiC by ion implantation

Crystalline (0001) plane wafers of n-type 6H-SiC have been implanted at room temperature with 200 keV Ge+ ions in the dose range 10(12) to 10(15) cm(-2). Electron paramagnetic resonance (EPR) measurements have been made on these samples both before and after annealing them at temperatures in the range room temperature to 1500 degrees C. The as-implanted samples have a single isotropic and asymmetric line EPR spectrum whose width, Delta B-pp, increases with ion dose before falling when a buried continuous amorphous layer is produced. This increase is interpreted in terms of the change in the relative intensity of a line with g = 2.0028 +/- 0.0002, Delta B-pp = 0.4 mT associated primarily with carbon dangling bonds in a-SiC and a line with g in the range 2.0033 to 2.0039 of uncertain origin. The variation with anneal temperature of the populations of these defects is reported.