Capacitance-voltage and admittance spectroscopy of self-assembled Ge islands in Si

被引：33

作者：

Miesner, C ^{[1
]}

Asperger, T ^{[1
]}

Brunner, K ^{[1
]}

Abstreiter, G ^{[1
]}

机构：

[1] Tech Univ Munich, Walter Schottky Inst, D-85748 Garching, Germany

来源：

APPLIED PHYSICS LETTERS | 2000年 / 77卷 / 17期

关键词：

D O I：

10.1063/1.1320036

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We investigate the electrical properties of self-assembled Ge islands embedded in Si Schottky diode structures by means of capacitance-voltage measurements and admittance spectroscopy. The Ge islands form at T=550 degrees C by self-assembly in the Stranski-Krastanow growth mode with an area density of 4.5x10(9) cm(-2). Their diameter and height are 70 and 6.5 nm, respectively. A linear increase of the thermal activation energy observed in voltage-dependent admittance spectroscopy shows that the ensemble of Ge islands has a low, continuous, averaged density of states. (C) 2000 American Institute of Physics. [S0003-6951(00)03443-4].

引用

页码：2704 / 2706

页数：3

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