Direct-current-induced drift direction of silicon adatoms on Si(111)-(1 x 1) surfaces

被引：43

作者：

Degawa, M ^{[1
]}

Minoda, H ^{[1
]}

Tanishiro, Y ^{[1
]}

Yagi, K ^{[1
]}

机构：

[1] Tokyo Inst Technol, Dept Phys, Tokyo 1528551, Japan

来源：

SURFACE SCIENCE | 2000年 / 461卷 / 1-3期

关键词：

ion etching; silicon; step formation and bunching; surface diffusion;

D O I：

10.1016/S0039-6028(00)00593-8

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The direction of the drift of adatoms induced by direct-current (DC) heating of Si(111)-(1x1) surfaces was studied from shape changes of a rectangular groove that was made by a focused ion beam (FIB) apparatus. It was found that the drift direction is to the current direction irrespective of the temperatures of the three ranges where DC-induced step-bunching behavior reverses twice. The result clearly shows that reversals of the current-induced step bunching are not due to reversals of the effective charge on silicon adatoms, but due to changes in the mechanism of step bunching. (C) 2000 Elsevier Science B.V. All rights reserved.

引用

页码：L528 / L536

页数：9

共 21 条

[1]

ALFONSO C, 1993, SURF SCI, V291, pL745, DOI 10.1016/0039-6028(93)91470-A

[2] Temperature dependence of period of step wandering formed on Si(111) vicinal surfaces by DC heating [J].