Properties of ultrathin platinum deposited by atomic layer deposition for nanoscale copper-metallization schemes

被引：32

作者：

Zhu, Yu ^{[1
]}

Dunn, Kathleen A. ^{[1
]}

Kaloyeros, Alain E. ^{[1
]}

机构：

[1] SUNY Albany, Coll Nanoscale Sci & Engn, Albany, NY 12203 USA

来源：

JOURNAL OF MATERIALS RESEARCH | 2007年 / 22卷 / 05期

关键词：

D O I：

10.1557/JMR.2007.0152

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A thermal metalorganic atomic layer deposition (ALD) process was developed for the in situ, sequential growth of Pt/TaNx, stacks for use as barrier/seed stacks for subsequent copper electroplating. Ultrathin platinum films were deposited by alternating pulses of (methylcyclopentadienyl)trimethylplatinum (MeCpPtMe3) and oxygen (O-2) as co-reactants. An ALD process window was established and optimized by investigating saturation of Pt film-growth rate versus MeCpPtMe3 and O-2 exposure as controlled by the length of reactant pulses and the duration of the inert gas purge cycles separating the reactant pulses. The resulting low-temperature (300 degrees C) ALD Pt process yielded uniform and continuous Pt films with typical carbon and oxygen impurity levels around, respectively, 2.5 and 1 at.%. Film conformality was nearly 100% in 120-nm trench structures with 11:1 aspect ratio.

引用

页码：1292 / 1298

页数：7

共 14 条

[1] Atomic layer deposition of platinum thin films [J].

Aaltonen, T ;

Ritala, M ;

Sajavaara, T ;

Keinonen, J ;

Leskelä, M .

CHEMISTRY OF MATERIALS, 2003, 15 (09) :1924-1928

[2] Integration of platinum bottom electrode on poly-Si for ferroelectric thin films [J].

Choi, ES ;

Yoon, SG ;

Choi, WY ;

Kim, HG .

APPLIED SURFACE SCIENCE, 1999, 141 (1-2) :77-82

[3] Chemical vapor deposition of iridium, platinum, rhodium and palladium [J].

Garcia, JRV ;

Goto, T .

MATERIALS TRANSACTIONS, 2003, 44 (09) :1717-1728

[4] Rapid vapor deposition of highly conformal silica nanolaminates [J].

Hausmann, D ;

Becker, J ;

Wang, SL ;

Gordon, RG .

SCIENCE, 2002, 298 (5592) :402-406

[5] Crystallographic and electrical properties of platinum film grown by chemical vapor deposition using (methylcyclopentadienyl)trimethylplatinum [J].

Hiratani, M ;

Nabatame, T ;

Matsui, Y ;

Kimura, S .

THIN SOLID FILMS, 2002, 410 (1-2) :200-204

[6] Platinum film growth by chemical vapor deposition based on autocatalytic oxidative decomposition [J].

Hiratani, M ;

Nabatame, T ;

Matsui, Y ;

Imagawa, K ;

Kimura, S .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2001, 148 (08) :C524-C527

[7] Atomic layer deposition of metal and nitride thin films: Current research efforts and applications for semiconductor device processing [J].

Kim, H .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2003, 21 (06) :2231-2261

[8] Liner materials for direct electrodeposition of Cu [J].

Lane, MW ;

Murray, CE ;

McFeely, FR ;

Vereecken, PM ;

Rosenberg, R .

APPLIED PHYSICS LETTERS, 2003, 83 (12) :2330-2332

[9] Atomic layer epitaxy of copper -: Growth and selectivity in the Cu(II)-2,2,6,6-tetramethyl-3,5-heptanedionate/H2 process [J].

Martensson, P ;

Carlsson, JO .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1998, 145 (08) :2926-2931

[10] Copper metallization for high performance silicon technology [J].

Rosenberg, R ;

Edelstein, DC ;

Hu, CK ;

Rodbell, KP .

ANNUAL REVIEW OF MATERIALS SCIENCE, 2000, 30 :229-262

← 1 2 →