The nature of localization in graphene under quantum Hall conditions

被引:63
作者
Martin, J. [1 ,2 ]
Akerman, N. [2 ]
Ulbricht, G. [3 ]
Lohmann, T. [3 ]
von Klitzing, K. [3 ]
Smet, J. H. [3 ]
Yacoby, A. [1 ,2 ]
机构
[1] Harvard Univ, Dept Phys, Cambridge, MA 02138 USA
[2] Weizmann Inst Sci, Dept Condensed Matter Phys, IL-76100 Rehovot, Israel
[3] Max Planck Inst Festkorperforsch, D-70569 Stuttgart, Germany
关键词
GAS;
D O I
10.1038/NPHYS1344
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
Particle localization is an essential ingredient in quantum Hall physics. In conventional high-mobility two-dimensional electron systems such as in GaAs/AlGaAs semiconductor heterostructures, Coulomb interactions were shown to compete with disorder and to have a central role in particle localization. Here, we address the nature of localization in graphene where the carrier mobility, quantifying the disorder, is two to four orders of magnitude smaller than in GaAs two-dimensional electron systems. We image the electronic density of states and the localized state spectrum of a graphene flake in the quantum Hall regime with a scanning single-electron transistor. Our microscopic approach provides direct insight into the nature of localization. Surprisingly, despite strong disorder, our findings indicate that localization in graphene is not dominated by single-particle physics, but rather by a competition between the underlying disorder potential and the repulsive Coulomb interaction responsible for screening.
引用
收藏
页码:669 / 674
页数:6
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