DOSE-RATE EFFECTS ON THE DYNAMIC ANNEALING MECHANISM IN P+-IMPLANTED SILICON

被引：13

作者：

BERTI, M

DRIGO, AV

LULLI, G

MERLI, PG

ANTISARI, MV

机构：

[1] CNR,IST LAMEL,I-40126 BOLOGNA,ITALY

[2] ENTE NATL ENERGIA ATOM,DIV SCI MAT CRE CASACCIA,ROMA,ITALY

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1986年 / 97卷 / 01期

关键词：

D O I：

10.1002/pssa.2210970105

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：77 / 85

页数：9

共 14 条

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[6] TRANSMISSION ELECTRON-MICROSCOPY OF SELF-ANNEALED ION-IMPLANTED SILICON [J].

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[8]

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[9] DYNAMIC OBSERVATION OF FORMATION OF DEFECTS IN SILICON UNDER ELECTRON AND PROTON IRRADIATION [J].

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ASHBY, SJ .

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[10]

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