TRANSMISSION ELECTRON-MICROSCOPY OF SELF-ANNEALED ION-IMPLANTED SILICON

被引：8

作者：

GABILLI, E ^{[1
]}

LOTTI, R ^{[1
]}

LULLI, G ^{[1
]}

MERLI, PG ^{[1
]}

ANTISARI, MV ^{[1
]}

机构：

[1] ENTE NAZL ENERGIA ATOM,DIV SCI MAT,CRE CASACCIA,ROMA,ITALY

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1985年 / 24卷 / 01期

关键词：

HEAT TREATMENT - Annealing - MICROSCOPES; ELECTRON; -; Applications;

D O I：

10.1143/JJAP.24.L14

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Self-annealing experiments were performed on thermally insulated (100) Si samples, implanting 100 kev P** plus ions at beam power densities of 15 and 25 w/cm**2. Cross and plan section characterization by TEM of the specimens lead to two main conclusions about the dynamic annealing mechanism: 1) ion bombardment enhances the rate of amorphous to crystalline transformation; 2) residual crystalline islands are present on the surface. They allow a regrowth of the amorphous region both from the front and the bottom of the layer.

引用

页码：L14 / L16

页数：3

共 9 条

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