EVIDENCE FOR SI DIFFUSION THROUGH EPITAXIAL NISI2 GROWN ON SI(111) - COMMENT

被引：8

作者：

DHEURLE, FM

THOMAS, O

机构：

来源：

APPLIED PHYSICS LETTERS | 1988年 / 52卷 / 26期

关键词：

D O I：

10.1063/1.99772

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：2269 / 2269

页数：1

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