TEMPERATURE DEPENDENCE OF APPARENT THRESHOLD VOLTAGE OF SILICON MOS TRANSISTORS AT CRYOGENIC TEMPERATURES

被引：14

作者：

NATHANSON, HC

JUND, C

GROSVALET, J

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1968年 / ED15卷 / 06期

关键词：

D O I：

10.1109/T-ED.1968.16191

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：362 / +

页数：1

共 15 条

[1]

CHEBAN AG, 1965, FIZ TVERD TELA+, V7, P1054

[2]

COBBOLD RSC, 1966, ELECTRON LETT, V2, P190

[3] TEMPERATURE INFLUENCE ON CHANNEL CONDUCTANCE OF MOS TRANSISTORS [J].

DEGRAAFF, HC ;

NIELEN, JA .

ELECTRONICS LETTERS, 1967, 3 (05) :195-&

[4]

DINGLE RB, 1955, PHILOS MAG, V46, P831

[5]

FANG FF, 1968, PHYS REV

[6] COMMENT ON DENSITY OF SIO2-SI INTERFACE STATES BY GRAY AND BROWN [J].

FRANKL, DR .

JOURNAL OF APPLIED PHYSICS, 1967, 38 (04) :1996-&

[7] SURFACE STATES IN SILICON FROM CHARGES IN OXIDE COATING [J].

GOETZBERGER, A ;

HEINE, V ;

NICOLLIAN, EH .

APPLIED PHYSICS LETTERS, 1968, 12 (03) :95-+

[8] DENSITY OF SIO2-SI INTERFACE STATES - (MOS DEVICES SI OXIDATION 100 DEGREES C O2 + 80 PPM H2O FERMI LEVEL E) [J].

GRAY, PV ;

BROWN, DM .

APPLIED PHYSICS LETTERS, 1966, 8 (02) :31-&

[9] TEMPERATURE DEPENDENCE OF N-TYPE MOS TRANSISTORS [J].

HEIMAN, FP ;

MIILLER, HS .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1965, ED12 (03) :142-+

[10] LOW TEMPERATURE EFFECTS IN SI FETS [J].

HOWARD, WE ;

FANG, FF .

SOLID-STATE ELECTRONICS, 1965, 8 (01) :82-&

← 1 2 →