OPTICAL INVESTIGATION OF THE ONE-DIMENSIONAL CONFINEMENT EFFECTS IN NARROW GAAS/GAALAS QUANTUM WIRES

被引：28

作者：

BIROTHEAU, L ^{[1
]}

IZRAEL, A ^{[1
]}

MARZIN, JY ^{[1
]}

AZOULAY, R ^{[1
]}

THIERRYMIEG, V ^{[1
]}

LADAN, FR ^{[1
]}

机构：

[1] CTR NATL ETUD TELECOMMUN,MICROSTRUCT & MICROELECTR LAB,F-92220 BAGNEUX,FRANCE

来源：

APPLIED PHYSICS LETTERS | 1992年 / 61卷 / 25期

关键词：

D O I：

10.1063/1.107997

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We show optical data obtained at 8 K on narrow GaAs/GaAlAs quantum wires, with width down to 15 nm, fabricated by reactive ion etching and metal organic chemical vapor deposition overgrowth. Lateral confinement energies (up to 23 meV) and polarization effects are evidenced in the photoluminescence excitation spectra. These experimental results are in good agreement with calculated absorption spectra, which include the effects of wire width fluctuations, yielding, for our fabrication technique, a value of +/-5 nm for these size fluctuations.

引用

页码：3023 / 3025

页数：3

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