DEFECT STATES IN AMORPHOUS-SILICON

被引：19

作者：

ISHII, N ^{[1
]}

KUMEDA, M ^{[1
]}

SHIMIZU, T ^{[1
]}

机构：

[1] KANAZAWA UNIV,FAC TECHNOL,DEPT ELECTR,KANAZAWA,ISHIKAWA 920,JAPAN

来源：

PHYSICA STATUS SOLIDI B-BASIC RESEARCH | 1983年 / 116卷 / 01期

关键词：

D O I：

10.1002/pssb.2221160112

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：91 / 100

页数：10

共 22 条

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