HIGH-PERFORMANCE POLY-SI TFTS WITH ECR-PLASMA HYDROGEN PASSIVATION

被引：13

作者：

UNAGAMI, T ^{[1
]}

TAKESHITA, T ^{[1
]}

机构：

[1] NIPPON TELEGRAPH & TEL PUBL CORP, ATSUGI, KANAGAWA 24301, JAPAN

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1989年 / 36卷 / 03期

关键词：

Electron Cyclotron Resonance - Polysilicon - Transconductance;

D O I：

10.1109/16.19964

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：529 / 533

页数：5

共 24 条

[1] TRANSPORT PROPERTIES OF POLYCRYSTALLINE SILICON FILMS
BACCARANI, G
RICCO, B
SPADINI, G
[J]. JOURNAL OF APPLIED PHYSICS, 1978, 49 (11) : 5565 - 5570
[2] 6 X 6-IN 20-LPI ELECTROLUMINESCENT DISPLAY PANEL
BRODY, TP
LUO, FC
SZEPESI, ZP
DAVIES, DH
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1975, 22 (09) : 739 - 748
[3] THE THIN-FILM TRANSISTOR - A LATE FLOWERING BLOOM
BRODY, TP
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1984, 31 (11) : 1614 - 1628
[4] ENHANCED CONDUCTIVITY IN PLASMA-HYDROGENATED POLYSILICON FILMS
CAMPBELL, DR
[J]. APPLIED PHYSICS LETTERS, 1980, 36 (07) : 604 - 606
[5] FIELD-EFFECT IN LARGE GRAIN POLYCRYSTALLINE SILICON
COLINGE, JP
MOREL, H
CHANTE, JP
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1983, 30 (03) : 197 - 201
[6] EFFECTS OF GRAIN-BOUNDARIES ON THE CHANNEL CONDUCTANCE OF SOI MOSFETS
FOSSUM, JG
ORTIZCONDE, A
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1983, 30 (08) : 933 - 940
[7] CW LASER RECRYSTALLIZATION OF (100) SI ON AMORPHOUS SUBSTRATES
GIBBONS, JF
LEE, KF
MAGEE, TJ
PENG, J
ORMOND, R
[J]. APPLIED PHYSICS LETTERS, 1979, 34 (12) : 831 - 833
[8] MOSFETS IN LASER-RECRYSTALLIZED POLYSILICON ON QUARTZ
KAMINS, TI
PIANETTA, PA
[J]. ELECTRON DEVICE LETTERS, 1980, 1 (10): : 214 - 216
[9] FIELD-EFFECTS IN POLYCRYSTALLINE-SILICON FILMS
KAMINS, TI
[J]. SOLID-STATE ELECTRONICS, 1972, 15 (07) : 789 - &
[10] RF RECRYSTALLIZATION OF POLYCRYSTALLINE SILICON ON FUSED-SILICA FOR MOSFET DEVICES
KOBAYASHI, Y
FUKAMI, A
SUZUKI, T
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1984, 131 (05) : 1188 - 1194

← 1 2 3 →