PERSISTENT PHOTOCONDUCTIVITY IN ALGAAS/GAAS MODULATION DOPED LAYERS AND FIELD-EFFECT TRANSISTORS - A REVIEW

被引：61

作者：

NATHAN, MI

机构：

来源：

SOLID-STATE ELECTRONICS | 1986年 / 29卷 / 02期

关键词：

D O I：

10.1016/0038-1101(86)90035-3

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

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页码：167 / 172

页数：6

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