HYDROGENATION AND ANNEALING KINETICS OF GROUP-III ACCEPTORS IN OXIDIZED SILICON EXPOSED TO KEV ELECTRONS

被引：10

作者：

PAN, SCS

SAH, CT

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1986年 / 60卷 / 01期

关键词：

D O I：

10.1063/1.337669

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：156 / 162

页数：7

共 17 条

[1]

EVERHART TE, 1971, J APPL PHYS, V42, P5487

[2] HYDROGEN MIGRATION UNDER AVALANCHE INJECTION OF ELECTRONS IN SI METAL-OXIDE-SEMICONDUCTOR CAPACITORS [J].

GALE, R ;

FEIGL, FJ ;

MAGEE, CW ;

YOUNG, DR .

JOURNAL OF APPLIED PHYSICS, 1983, 54 (12) :6938-6942

[3] NEUTRALIZATION OF SHALLOW ACCEPTOR LEVELS IN SILICON BY ATOMIC-HYDROGEN [J].

PANKOVE, JI ;

CARLSON, DE ;

BERKEYHEISER, JE ;

WANCE, RO .

PHYSICAL REVIEW LETTERS, 1983, 51 (24) :2224-2225

[4] HYDROGEN LOCALIZATION NEAR BORON IN SILICON [J].

PANKOVE, JI ;

ZANZUCCHI, PJ ;

MAGEE, CW ;

LUCOVSKY, G .

APPLIED PHYSICS LETTERS, 1985, 46 (04) :421-423

[5] NEUTRALIZATION OF ACCEPTORS IN SILICON BY ATOMIC-HYDROGEN [J].

PANKOVE, JI ;

WANCE, RO ;

BERKEYHEISER, JE .

APPLIED PHYSICS LETTERS, 1984, 45 (10) :1100-1102

[6] HYDROGENATION AND ANNEALING KINETICS OF GROUP-III ACCEPTORS IN OXIDIZED SILICON [J].

SAH, CT ;

PAN, SCS ;

HSU, CCH .

JOURNAL OF APPLIED PHYSICS, 1985, 57 (12) :5148-5161

[7] GENERATION ANNEALING KINETICS OF INTERFACE STATES ON OXIDIZED SILICON ACTIVATED BY 10.2-EV PHOTOHOLE INJECTION [J].

SAH, CT ;

SUN, JYC ;

TZOU, JJT .

JOURNAL OF APPLIED PHYSICS, 1982, 53 (12) :8886-8893

[8] DEACTIVATION OF GROUP-III ACCEPTORS IN SILICON DURING KEV ELECTRON-IRRADIATION [J].

SAH, CT ;

SUN, JYC ;

TZOU, JJ ;

PAN, SCS .

APPLIED PHYSICS LETTERS, 1983, 43 (10) :962-964

[9] GENERATION-ANNEALING KINETICS OF THE INTERFACE DONOR STATES AT 0.25 EV ABOVE THE MIDGAP AND THE TURN-AROUND PHENOMENA ON OXIDIZED SILICON DURING AVALANCHE ELECTRON INJECTION [J].

SAH, CT ;

SUN, JYC ;

TZOU, JJT .

JOURNAL OF APPLIED PHYSICS, 1983, 54 (05) :2547-2555

[10] STUDY OF THE ATOMIC MODELS OF 3 DONORLIKE DEFECTS IN SILICON METAL-OXIDE-SEMICONDUCTOR STRUCTURES FROM THEIR GATE MATERIAL AND PROCESS DEPENDENCIES [J].

SAH, CT ;

SUN, JYC ;

TZOU, JJT .

JOURNAL OF APPLIED PHYSICS, 1984, 55 (06) :1525-1545

← 1 2 →